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Prevention of Condensation Defects on Contact Patterns by Improving Rinse Process

Journal Solid State Phenomena (Volumes 145 - 146)
Volume Ultra Clean Processing of Semiconductor Surfaces IX
Edited by Paul Mertens, Marc Meuris and Marc Heyns
Pages 151-154
DOI 10.4028/www.scientific.net/SSP.145-146.151
Citation Jung Min Oh et al., 2009, Solid State Phenomena, 145-146, 151
Online since January, 2009
Authors Jung Min Oh, Jeong Nam Han, Kun Tack Lee, Chang Ki Hong, Woo Sung Han, Joo Tae Moon, Jin Goo Park
Keywords Condensation, Crystal Defect, DIW Rinse, Residual Gas
Abstract

The present work reports a method to prevent the condensation defects on contact hole patterns by improving the rinsing process after a dry etching. In general, residual gases on the surface after the dry etching can be easily removed by using a DI water rinse. However, the residual gas can not be completely removed in high aspect ratio contact holes, resulting in the condensation defect. In this work, in order to completely remove the residual gas inside the contact holes, several rinse processes were employed such as a megasonic rinse, a sequential rinse and a hot temperature rinse. These proposed rinse methods were effective in eliminating the residual dry etching gases in the high aspect ratio contact holes and thus were able to remove condensation defects on contact holes.

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