Paper Title:
Single Wafer Ozone-Based Processing for Effective Edge Fluoropolymer Cleaning
  Abstract

The interaction between photo resist and highly polymerizing dry etch chemistries results in the deposition of fluoropolymers on the bevel and edge of silicon wafers. These polymers are inert to most aqueous processing chemicals, but exposure to HF lifts these polymers off the bevel. This results in migration of defects to the face of the wafers. The defects are generally found within 50mm from the edge of the wafer.

  Info
Periodical
Solid State Phenomena (Volumes 145-146)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
155-158
DOI
10.4028/www.scientific.net/SSP.145-146.155
Citation
J. Niccoli, M. Cogrono, M. Eastlack, D. McCane, C. Carlson, E. Young, D. Chapek, "Single Wafer Ozone-Based Processing for Effective Edge Fluoropolymer Cleaning", Solid State Phenomena, Vols. 145-146, pp. 155-158, 2009
Online since
January 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Alex Kabansky, Harry Lee
59
Authors: Atsuro Eitoku, James Snow, Rita Vos, Karine Kenis, Paul W. Mertens
177
Authors: Daniel A. Koos, Julia Svirchevski, Daniel J. Vitkavage, David G. Hansen, Karen A. Reinhardt, Frank Huang, Marie Mitchel, Guang Ying Zhang
291
Authors: Don Dussault, F. Fournel, V. Dragoi
Chapter 8: Cleaning for 3D Applications
Abstract:Current work describes development, testing and verification of a single wafer megasonic cleaning method utilizing a transducer design that...
269
Authors: Jong Seok Lee, Geun Min Choi, Ji Nok Jung, Dong Duk Lee, Gin Yung Hur, Jai Ho Lee, Che Hyuk Chi, Dae Hee Gimm
Chapter 1: Cleaning for FEOL Applications
Abstract:With scaling of ULSI devices, the process temperatures are continuously lowered. The oxide films, which were deposited at low temperature,...
21