Application of Single-Wafer Wet Cleaning Prior to Epitaxial SiGe Process |
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| Journal | Solid State Phenomena (Volumes 145 - 146) |
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| Volume | Ultra Clean Processing of Semiconductor Surfaces IX |
| Edited by | Paul Mertens, Marc Meuris and Marc Heyns |
| Pages | 173-176 |
| DOI | 10.4028/www.scientific.net/SSP.145-146.173 |
| Citation | Kenichi Sano et al., 2009, Solid State Phenomena, 145-146, 173 |
| Online since | January, 2009 |
| Authors | Kenichi Sano, Masayuki Wada, Frederik E. Leys, Roger Loo, Andriy Hikavyy, Paul W. Mertens, James Snow, Akira Izumi, Katsuhiko Miya, Atsuro Eitoku |
| Keywords | Dry, Epitaxial Growth, HF, IPA, Silicon, Silicon-Germanium (SiGe), Single Wafer Cleaning |
| Abstract | Strained silicon engineering was first used at the 90-nm node. Nowadays, a series of techniques has seen wide-spread use and many derivatives are available because of their ease of integration and cost-effective features [ , ]. As a main part of stressor technique, embedded SiGe-S/D technology is reported to improve the pMOSFET drive current [ , ]. |
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