Paper Title:
Application of Single-Wafer Wet Cleaning Prior to Epitaxial SiGe Process
  Abstract

Strained silicon engineering was first used at the 90-nm node. Nowadays, a series of techniques has seen wide-spread use and many derivatives are available because of their ease of integration and cost-effective features [ , ]. As a main part of stressor technique, embedded SiGe-S/D technology is reported to improve the pMOSFET drive current [ , ].

  Info
Periodical
Solid State Phenomena (Volumes 145-146)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
173-176
DOI
10.4028/www.scientific.net/SSP.145-146.173
Citation
K. Sano, M. Wada, F. E. Leys, R. Loo, A. Hikavyy, P. W. Mertens, J. Snow, A. Izumi, K. Miya, A. Eitoku, "Application of Single-Wafer Wet Cleaning Prior to Epitaxial SiGe Process", Solid State Phenomena, Vols. 145-146, pp. 173-176, 2009
Online since
January 2009
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Price
$32.00
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