Paper Title:
Silicon Surface Preparation and Passivation by Vapor Phase of Heavy Water
  Abstract

The well known wet chemical treatments of the silicon surface and its native oxidation in air cause a high density of interface states, which predominantly originate from dangling bonds strained bonds or from bonds, between adsorbates and silicon surface atoms. Therefore, a number of wet-chemical treatments have been developed for ultraclean processing in order to produce chemically and electronically passivated surfaces [1]. The saturation of dangling bonds by hydrogen removes the surface states and replaces them by adsorbate-induced states, which influence the surface band-bending [2]. The first thermal hydrogen desorption peak from a hydrogen passivated Si surface in vacuum or inert gas ambient can be detected at around 380°C [3,4]. Simultaneously the combination of the hydrogen atoms of neighboring dihydrides generates a pair of dangling bonds. At around 480-500°C dangling bonds are generated on the silicon surface by desorption of the remaining hydrogen [5]. At that moment the silicon surface becomes extremely reactive.

  Info
Periodical
Solid State Phenomena (Volumes 145-146)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
181-184
DOI
10.4028/www.scientific.net/SSP.145-146.181
Citation
A. E. Pap, Z. Nényei, G. Battistig, I. Bársony, "Silicon Surface Preparation and Passivation by Vapor Phase of Heavy Water ", Solid State Phenomena, Vols. 145-146, pp. 181-184, 2009
Online since
January 2009
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Price
$32.00
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