Paper Title:
Three-Step Room Temperature Wet Cleaning Process for Silicon Substrate
  Abstract

With a progress of device dimension miniaturization, an ultraclean wafer surface is continuously increasing its importance crucial for high quality processing in Silicon Technologies [1]-[8]. Cleaning of silicon wafer surface has been accomplished by RCA wet cleaning in the past [9], where there exists high temperature processes consisting of H2SO4/H2O2/H2O, NH4OH/H2O2/H2O and HCl/H2O2/H2O treatments. Thus, RCA cleaning requires a large number of processing steps, resulting in the consumption of a huge volume of liquid chemicals and UPW, and simultaneously consuming a large volume of clean air exhaust to suppress chemical vapor from getting into the clean room. Moreover, RCA cleaning is used at high temperature and contain alkali solutions, which increase the roughness of the silicon wafer surface [10].

  Info
Periodical
Solid State Phenomena (Volumes 145-146)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
189-192
DOI
10.4028/www.scientific.net/SSP.145-146.189
Citation
R. Hasebe, A. Teramoto, T. Suwa, R. Kuroda, S. Sugawa, T. Ohmi, "Three-Step Room Temperature Wet Cleaning Process for Silicon Substrate", Solid State Phenomena, Vols. 145-146, pp. 189-192, 2009
Online since
January 2009
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Price
$32.00
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