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Influence of Wet Cleaning on Tungsten Deposited with Different Techniques

Journal Solid State Phenomena (Volumes 145 - 146)
Volume Ultra Clean Processing of Semiconductor Surfaces IX
Edited by Paul Mertens, Marc Meuris and Marc Heyns
Pages 197-200
DOI 10.4028/www.scientific.net/SSP.145-146.197
Citation Annamaria Votta et al., 2009, Solid State Phenomena, 145-146, 197
Online since January, 2009
Authors Annamaria Votta, Francesco Pipia, S. Borsari, Enrica Ravizza, Alice C. Elbaz, Mauro Alessandri, Enrico Bellandi, C. Bresolin
Keywords Tungsten, Tungsten Oxide, Wet Cleaning
Abstract

Tungsten is a metal widely used for interconnections. As a consequence of more stringent requirements in terms of aspect ratio deriving from device shrinking, the filling of W plugs is becoming more and more critical and new deposition techniques need to be employed to properly fill contacts and trenches. For example ALD nucleation layers need to be coupled to CVD deposition. Since physical-chemical properties of W are heavily influenced by deposition techniques, the effect of wet cleanings on different kind of W needs to be fully understood in order to avoid any kind of W corrosion or recession during wet cleaning with W exposed. In this paper the effect of several chemicals commonly used in BEOL wet cleanings for polymer removal, has been investigated on W films deriving from both CVD and ALD deposition techniques.

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