Paper Title:
Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing
  Abstract

The Si transistor has dominated the semiconductor industry for decades. However, to fulfill the demands of Moore’s law, the Si transistor has been pushed to its physical limits. Introducing new materials with higher intrinsic carrier mobility is one way to solve this problem. Ge, GaAs and InGaAs are known for their high mobilities and are therefore suitable candidates for replacing Si as a channel material. However, introduction of new materials raises new issues. For Si processing, several steps such as cleaning, etching and stripping are based on wet treatments. The knowledge of etch rates of the semiconductor material is of great importance. In this paper, etch rates of Ge, GaAs and InGaAs in several chemical solutions are studied. A comparison of the etch rates is made between the materials.

  Info
Periodical
Solid State Phenomena (Volumes 145-146)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
203-206
DOI
10.4028/www.scientific.net/SSP.145-146.203
Citation
S. Sioncke, D. P. Brunco, M. Meuris, O. Uwamahoro, J. Van Steenbergen, E. Vrancken, M. M. Heyns, "Etch Rate Study of Germanium, GaAs and InGaAs: A Challenge in Semiconductor Processing", Solid State Phenomena, Vols. 145-146, pp. 203-206, 2009
Online since
January 2009
Keywords
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Guy Vereecke, J. Veltens, Kai Dong Xu, Atsuro Eitoku, Kenichi Sano, Sophia Arnauts, Karine Kenis, James Snow, Chris Vinckier, Paul W. Mertens
Abstract:With the continuous shrinkage of critical sizes in semiconductor manufacturing, nano-particles smaller than 100-nm are becoming a potential...
155
Authors: Sonja Sioncke, Marcel Lux, Wim Fyen, Marc Meuris, Paul W. Mertens, Antoon Theuwis
173
Authors: Masayuki Wada, H. Takahashi, J. Snow, Rita Vos, P.W. Mertens, H. Shirakawa
Chapter 3: FEOL: Photo Resist Removal
Abstract:In the very near future 32(28)-nm node device technology innovations will enter high volume manufacturing. New materials and structures, e.g....
105
Authors: Masayuki Wada, H. Takahashi, James Snow, Rita Vos, Thierry Conard, Paul W. Mertens, H. Shirakawa
Chapter 1: FEOL Surface Chemistry, Etching and Passivation
Abstract:Since silicon will ultimately face physical limitations, germanium and III-V materials, such as Ga, GaAs, InGaAs, are being extensively...
19
Authors: Rita Vos, Sophia Arnauts, Thierry Conard, Alain Moussa, Herbert Struyf, Paul W. Mertens
Chapter 1: FEOL Surface Chemistry, Etching and Passivation
Abstract:In this work, the compatibility of InP and InGaAs in cleaning solutions commonly used in semiconductor manufacturing is investigated. Aqueous...
27