Paper Title:
Advances on 45nm SiGe-Compatible NiPt Salicide Process
  Abstract

NiPt self-aligned silicide (salicide) has become a major candidate for the 45nm node due to its better thermal stability and the surface morphology of NiSi on Si substrate [1,2]. SiGe has been proposed for PMOS strain engineering [3]. The relevant SiGe oxidation behavior [4], reaction with platinum [5] and thermal stress behavior [6] are important factors in developing a process for 45nm NiPt salicide over SiGe stressor. These concerns require the review of the current process for NiPt to verify its compatibility and extendibility.

  Info
Periodical
Solid State Phenomena (Volumes 145-146)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
211-214
DOI
10.4028/www.scientific.net/SSP.145-146.211
Citation
Y. W. Chen, N. T. Ho, J. Lai, T.C. Tsai, C.C. Huang, S.F. Tzou, J. M.M. Chu, "Advances on 45nm SiGe-Compatible NiPt Salicide Process", Solid State Phenomena, Vols. 145-146, pp. 211-214, 2009
Online since
January 2009
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Price
$32.00
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