Paper Title:
Co-Solvent Effect on the HF/CO2 Dry Etching of Sacrificial Oxides
  Abstract

In this work, we studied HF/scCO2 dry etching processes with various co-solvents for the purpose of reducing the residues. The effect of co-solvent on etch rate and selectivity was also investigated.

  Info
Periodical
Solid State Phenomena (Volumes 145-146)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
235-238
DOI
10.4028/www.scientific.net/SSP.145-146.235
Citation
J. H. Bae, J. M. Jung, K. T. Lim, "Co-Solvent Effect on the HF/CO2 Dry Etching of Sacrificial Oxides", Solid State Phenomena, Vols. 145-146, pp. 235-238, 2009
Online since
January 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Hua Cui, Martine Claes, Samuel Suhard
Chapter 7: Back-End-of-Line Cleaning
Abstract:A novel wet cleaning formulation approach was developed with a TiN etch rate of more than 30 Å/min at room temperature and more than 100...
241
Authors: Chia Jung Hsu, Chieh Ju Wang, Sheng Hung Tu, Makonnen Payne, Emanuel Cooper, Steven Lippy
Chapter 7: Interconnect Cleaning
Abstract:Sub-10 nm technology node manufacturing processes may require the use of thicker and denser TiN hard mask for patterning at the BEOL. The...
245