Paper Title:
Material Loss Impact on Device Performance for 32nm CMOS and Beyond
  Abstract

As semiconductor technology moves past the 32nm CMOS node, material loss becomes an ever more important topic. Besides impacting the size of physical features, material loss impacts electrical results, process control, and defectivity. The challenge this poses is further exacerbated by the introduction of new materials. The largest single influx of new materials has come over the last decade with the introduction of high-k/metal gate (HK/MG) materials. This paper focuses on the front-end-of-line (FEOL), summarizing key materials loss issues by process loop.

  Info
Periodical
Solid State Phenomena (Volumes 145-146)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
245-248
DOI
10.4028/www.scientific.net/SSP.145-146.245
Citation
B. K. Kirkpatrick, J. J. Chambers, S. L. Prins, D. J. Riley, W. Z. Xiong, X. Wang, "Material Loss Impact on Device Performance for 32nm CMOS and Beyond ", Solid State Phenomena, Vols. 145-146, pp. 245-248, 2009
Online since
January 2009
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Price
$32.00
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