Paper Title:
Evaluation of Plasma Strip Induced Substrate Damage
  Abstract

High dose, ultra shallow junction implant resist strip requires minimal substrate loss and dopant loss. Silicon recess (silicon loss) under the source/drain (S/D) extensions increases the S/D extension resistance and decreases drive currents by changing the junction profile. ITRS surface preparation technology roadmap [1] targets silicon loss to be 0.4Å per cleaning step for 45nm and 0.3Å for 32nm generation. Fluorine-containing chemistries which are often used to enhance implanted resist strip and residue removal result in unacceptable substrate loss. A non-fluorine plasma strip was developed in earlier work and is qualified for 45nm logic production [2]. The objective of this work is to study the substrate damage that is induced by the resist strip plasma process. Silicon surface oxidation and silicon loss of different plasma strip chemistries were evaluated with various metrologies such as optical ellipsometry, electrical oxide measurement, XPS, TEM and mass measurement. The impact of different strip chemistries on dopant retention and distribution is also discussed.

  Info
Periodical
Solid State Phenomena (Volumes 145-146)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
249-252
DOI
10.4028/www.scientific.net/SSP.145-146.249
Citation
K. P. Han, S. Luo, O. Escorcia, C. Waldfried, I. L. Berry, "Evaluation of Plasma Strip Induced Substrate Damage", Solid State Phenomena, Vols. 145-146, pp. 249-252, 2009
Online since
January 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Mike S. Ameen, Aseem K. Srivastava, Ivan L. Berry
Abstract:We have investigated the use of Rs and SIMS measurements to quantify substrate erosion due to plasma ashing and subsequent wet cleaning in...
129
Authors: Aseem K. Srivastava, Ke Ping Han, Mike S. Ameen, Ivan L. Berry, Stu Rounds
133
Authors: G. Mannaert, L. Witters, Denis Shamiryan, Werner Boullart, K. Han, S. Luo, A. Falepin, R. Sonnemans, Ivan L. Berry, Carlo Waldfried
Abstract:The most advanced technology nodes require ultra shallow extension implants (low energy) which are very vulnerable to ash related substrate...
253
Authors: Shi Jian Luo, Orlando Escorcia, David Mattson, Carlo Waldfried, Dong Wan Roh, Ivan Berry III
Chapter 3: FEOL: Photo Resist Removal
Abstract:Two alternative plasma strip processes were developed to meet the photoresist (PR) removal requirements of future technology nodes. Compared...
93
Authors: Marion Croisy, Cécile Jenny, Claire Richard, Denis Guiheux, Alain Campo, Erwine Pargon, Nicolas Possémé
Chapter 4: FEOL: Photoresist Removal, General Cleaning
Abstract:With the increase of implantation dose in new technologies, implanted photoresist stripping is even more challenged in terms of efficiency...
111