Paper Title:
Post Ion-Implant Photoresist Stripping Using Steam and Water: Pre-Treatment in a Steam Atmosphere and Steam-Water Mixed Spray
  Abstract

It is well-known that ion-implant doses greater than 5E14 atoms/cm2 can create an amorphous carbon-like layer “crust”, and also that this crust is extremely difficult to dissolve with wet chemicals. In practice, a combination of dry plasma ashing and wet chemical removal is used to eliminate the photoresist. In this study, a novel photoresist stripping technique is proposed. We have improved wet vapor photoresist stripping technique [1] using the mixture of high-speed steam flow and purified water droplets. Relatively low pressure clean steam is mixed with purified water in the nozzle, and sprayed on a photoresist coated Si wafer. We have also developed a pre-treatment method in a chamber with keeping both temperature and humidity constant, in order to strip post ion-implanted photoresit. The most significant feature of this proposed technique is that we use water only; hence we are able to strip photoresist without chemicals.

  Info
Periodical
Solid State Phenomena (Volumes 145-146)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
273-276
DOI
10.4028/www.scientific.net/SSP.145-146.273
Citation
T. Sanada, M. Watanabe, A. Hayashida, Y. Isago, "Post Ion-Implant Photoresist Stripping Using Steam and Water: Pre-Treatment in a Steam Atmosphere and Steam-Water Mixed Spray ", Solid State Phenomena, Vols. 145-146, pp. 273-276, 2009
Online since
January 2009
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