Paper Title:
Photoresist Removal Using Alternative Chemistries and Pressures
  Abstract

Approximately 20% of the processing steps in integrated circuit (IC) fabrication involve surface cleaning and removal of photoresist and plasma etch residues. Continuous device minimization requires the use of thin films (<20 nm), closely spaced features, and ultra shallow junctions (<50nm); as a result, the challenges associated with effective surface cleaning are intensified. In addition, to insure high device performance, incorporation of alternate materials such as copper, ruthenium, and molybdenum, porous low dielectric constant SiO2-based insulators, and hafnium or zirconium oxides or silicates into device structures is taking place. Integration of these materials into working devices requires precise control of surface properties. In order to eliminate damage to films or substrates, avoid modification of surfaces, promote contaminant removal rates and enhance process control, approaches such as use of downstream plasmas, liquid cleaning with low concentrations of reactive chemicals, mechanical agitation, and liquid or particle jets have been implemented [1].

  Info
Periodical
Solid State Phenomena (Volumes 145-146)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
303-310
DOI
10.4028/www.scientific.net/SSP.145-146.303
Citation
I. G. Song, C. Timmons, G. Levitin, D. W. Hess, "Photoresist Removal Using Alternative Chemistries and Pressures", Solid State Phenomena, Vols. 145-146, pp. 303-310, 2009
Online since
January 2009
Export
Price
$35.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Martine Claes, Quoc Toan Le, J. Keldermans, Els Kesters, Marcel Lux, A. Franquet, Guy Vereecke, Paul W. Mertens, M.M. Frank, Robert Carleer, P. Adriaensens, D. Vanderzande
325
Authors: H. Kiyose, K. Saito, I. Mizobata, T. Iwata, S. Hirae, Koichiro Saga, Hitoshi Kuniyasu, Takeshi Hattori
341
Authors: Koichiro Saga, Hitoshi Kuniyasu, Takeshi Hattori, K. Saito, I. Mizobata, T. Iwata, S. Hirae
355
Authors: Quoc Toan Le, Els Kesters, L. Prager, Martine Claes, Marcel Lux, Guy Vereecke
Abstract:In Back-End-of-Line processing, the remaining photoresist layer after plasma etch is traditionally removed using a plasma process. Plasma...
323