Ozone Chemistry for BEOL Resist Stripping – A Systematic Analytical Attempt to Understand the Interaction of O3 with Modern DUV-Resists |
|
| Journal | Solid State Phenomena (Volumes 145 - 146) |
|---|---|
| Volume | Ultra Clean Processing of Semiconductor Surfaces IX |
| Edited by | Paul Mertens, Marc Meuris and Marc Heyns |
| Pages | 311-314 |
| DOI | 10.4028/www.scientific.net/SSP.145-146.311 |
| Citation | Mathias Guder et al., 2009, Solid State Phenomena, 145-146, 311 |
| Online since | January, 2009 |
| Authors | Mathias Guder, Maren Pellowska, Maximilian Pohland, Michael Dalmer, Bernd O. Kolbesen |
| Keywords | Decomposition, Ozone, Radical, Radical Trapping, Resist Characterization |
| Abstract | This work deals with the application of ozonated water for the BEOL stripping of DUV-resists. For this purpose analytical techniques for the quantification of molecular O3 in the water as well as methods for the non-destructive analysis of resists on wafers have been studied. The aim is to be able to determine the concentrations of O3, its decomposition, under the influence of various parameters, and to correlate these data with the polymer structure of the resist on the wafer and the efficiency of resist removal. |
| Full Paper | 
Get the full paper by clicking here
|
First page example
