Paper Title:
Modification of Photoresist by UV for Post-Etch Wet Strip Applications
  Abstract

In Back-End-of-Line processing, the remaining photoresist layer after plasma etch is traditionally removed using a plasma process. Plasma process was reported to induce damage to porous dielectric [1-3]. To minimize damage to low-k material, wet alternative methods of removal of photoresist layer on porous low-k dielectrics are gaining a renewed interest [4]. However, the presence of a “crust” generated by etch plasma at the photoresist surface makes it impossible to completely remove by a pure organic solvent. Indeed, the crust, most likely composed of crosslinked polymer, is not soluble in organic solvents [5]. For this reason, a UV pre-treatment is investigated to break cross-links in the crust or to modify the crust to enhance removal efficiency with solvent stripping in more advanced generations.

  Info
Periodical
Solid State Phenomena (Volumes 145-146)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
323-326
DOI
10.4028/www.scientific.net/SSP.145-146.323
Citation
Q. T. Le, E. Kesters, L. Prager, M. Claes, M. Lux, G. Vereecke, "Modification of Photoresist by UV for Post-Etch Wet Strip Applications", Solid State Phenomena, Vols. 145-146, pp. 323-326, 2009
Online since
January 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Quoc Toan Le, F. Drieskens, T. Conard, M. Lux, J.F. de Marneffe, H. Struyf, G. Vereecke
Chapter 7: Back-End-of-Line Cleaning
Abstract:In back-end of line processing, the polymer deposited on the dielectric sidewalls during the etch must be removed prior to subsequent...
207
Authors: Els Kesters, Marcel Lux, Joris Pittevils, Jonas Baeyens, Guy Vereecke, Christina Baerts, Denis Shamiryan, Herbert Struyf
Chapter 7: Back-End-of-Line Cleaning
Abstract:All-wet processes are gaining a renewed interest for the removal of post-etch photoresist (PR) and Bottom AntiReflective Coating (BARC) in...
219
Authors: Els Kesters, Q.T. Le, I. Simms, K. Nafus, H. Struyf, S. De Gendt
Chapter 4: Cleaning for BEOL and 3D Applications
Abstract:In back-end of line processing (BEOL), the polymer deposited on the dielectric sidewalls during the etch process must be removed prior to...
114
Authors: Quoc Toan Le, E. Kesters, T. Conard, H. Struyf, S. De Gendt
Chapter 4: Cleaning for BEOL and 3D Applications
Abstract:In back-end of line (BEOL), the use of fluorocarbon-containing plasmas such as CF4 and C4F8 for patterning...
132
Authors: Quoc Toan Le, E. Kesters, J. Devonport, F. Holsteyns, S. De Gendt
Chapter 7: Cleaning for BEOL Interconnect Applications
Abstract:In back-end of line (BEOL), the fluorinated polymer deposited on dielectric sidewalls during patterning [1,2] must be removed prior to...
197