Paper Title:
The Effect of PVA Brush Scrubbing on Post CMP Cleaning Process for Damascene Cu Interconnection
  Abstract

Cu (copper) has been widely used for interconnection structure in integrated circuits because of its properties such as a low resistivity and high resistance to electromigration when compared with aluminum [1, 2]. Damascene process for the interconnection structure utilizes 2-steps CMP (chemical mechanical polishing). After 2-steps CMP process, many abrasive particles leave on the wafer surface, which should be removed in post-Cu CMP cleaning process. Cleaning efficiency affects directly on the subsequent process and device yield [3]. Therefore, cleaning of abrasive particles is the critical issue in semiconductor manufacturing.

  Info
Periodical
Solid State Phenomena (Volumes 145-146)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
367-370
DOI
10.4028/www.scientific.net/SSP.145-146.367
Citation
H. C. Cho, Y. M. Kim, H. S. Lee, S. B. Joo, H. D. Jeong, "The Effect of PVA Brush Scrubbing on Post CMP Cleaning Process for Damascene Cu Interconnection", Solid State Phenomena, Vols. 145-146, pp. 367-370, 2009
Online since
January 2009
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