A Novel Copper Interconnection Cleaning by Atomic Hydrogen Using Diluted Hydrogen Gas
| Periodical | Solid State Phenomena (Volumes 145 - 146) |
|---|---|
| Main Theme | Ultra Clean Processing of Semiconductor Surfaces IX |
| Edited by | Paul Mertens, Marc Meuris and Marc Heyns |
| Pages | 389-392 |
| DOI | 10.4028/www.scientific.net/SSP.145-146.389 |
| Citation | Kazuki Abe et al., 2009, Solid State Phenomena, 145-146, 389 |
| Online since | January, 2009 |
| Authors | Kazuki Abe, Akira Izumi |
| Keywords | Atomic Hydrogen, Copper (Cu), Copper Oxide, Diluted Hydrogen, Hot Wire, Reduction |
| Price | US$ 28,- |
Cu has been used as interconnection and lead frame in ULSIs. However, the oxidation and contamination of Cu are not easily avoided. As a result, a thin layer of Cu2O, CuO and carbon contaminations are formed at the Cu surface and these resistances are increased. Therefore, Cu cleaning is necessary. There are some reports to remove Cu oxide layers. Chemical processes such as H2 and NH3 plasma reduction are being investigated [1-5]. These methods have the problem of the plasma damage. Lee et al. proposed Cu oxide reduction using vacuum annealing [6]. However, it seems not suitable for the ULSI process, because the heat-treatment of 400oC is necessary. Therefore, low temperature Cu cleaning without plasma assist is strongly desired. In our previous work, we proposed novel low temperature atomic hydrogen or NH3 decomposed species cleaning generated by heated catalyzer [7,8]. However, in the method it is used 100% hydrogen gas. From the view point of safety, hydrogen gas diluted below explosion limit is preferred to use. In this paper we proposed a novel Cu cleaning method by atomic hydrogen generated on a heated tungsten catalyzer using diluted hydrogen as a cleaning gas.
