Materials Science & Technology

FULLTEXT SEARCH
NEW: Advanced Search

High Velocity Aerosol Cleaning with Organic Solvents: Particle Removal and Substrate Damage

Journal Solid State Phenomena (Volumes 145 - 146)
Volume Ultra Clean Processing of Semiconductor Surfaces IX
Edited by Paul Mertens, Marc Meuris and Marc Heyns
Pages 39-42
DOI 10.4028/www.scientific.net/SSP.145-146.39
Citation Michael T. Andreas et al., 2009, Solid State Phenomena, 145-146, 39
Online since January, 2009
Authors Michael T. Andreas, Kurt Wostyn, Masayuki Wada, Tom Janssens, Karine Kenis, Twan Bearda, Paul W. Mertens
Keywords Aerosol Cleaning, Damage, EGEE, NMP, Particle Removal, Single Wafer Cleaning, THFA
Abstract

High velocity aerosol cleaning using ultrapure water or dilute aqueous solutions (e.g. dilute ammonia) is common in semiconductor IC fabrication [1]. This process combines droplet impact forces with continuous liquid flow for improved cleaning efficiency of sub-100nm particles. As with any physically enhanced cleaning process, improved particle removal can be accompanied by increased substrate damage, especially to smaller (<80nm) features [2]. Solvents such as N-methylpyrrolidone (NMP) and tetrahydrofurfuryl alcohol (THFA) are used for resist strip applications [3]. It is possible, and sometimes useful, to deliver these solvents through the same spray nozzle normally used for aqueous spray cleaning. In this presentation we explore the particle removal and substrate damage performance of 2-ethoxyethanol (EGEE), NMP and THFA as used in a conventional aerosol spray cleaning system

Full Paper PDF Get the full paper by clicking here

First page example

Preview of first page