Paper Title:
Calculation of Carrier Scattering and Negative Magnetoresistance in Mn-Doped GaAs/InGaAs/GaAs Quantum Well with Ferromagnetism
  Abstract

We have investigated the thermodynamic, transport and magnetotransport properties of free charge carriers in a diluted magnetic semiconductor with a quantum well InGaAs in the GaAs with δ-doped by C and Mn. In order to determine the density of the holes in a quantum well, we carried out thermodynamic calculations of the system of free holes, atoms Mn0 and ions Mn–. We calculated the temperature dependence of resistance and magnetoresistance of holes in the quantum well. The contributions of various scattering mechanisms of holes to the resistance were analyzed. The negative magnetoresistance are explained as the reduction of spin-flip scattering by aligning spins of the magnetic field.

  Info
Periodical
Solid State Phenomena (Volumes 152-153)
Edited by
N. Perov
Pages
283-286
DOI
10.4028/www.scientific.net/SSP.152-153.283
Citation
V.A. Kulbachinskii, L. Shchurova, "Calculation of Carrier Scattering and Negative Magnetoresistance in Mn-Doped GaAs/InGaAs/GaAs Quantum Well with Ferromagnetism", Solid State Phenomena, Vols. 152-153, pp. 283-286, 2009
Online since
April 2009
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