Paper Title:
Impurity Assisted Interlayer Exchange Coupling in Iron/Silicon Multilayers
  Abstract

The model of exchange coupling between ferromagnetic metal layers across a non-degenerate semiconductor spacer with point-like defects is considered. Calculation of an asymptotic behavior of the exchange integral is carried out. The exchange integral is found to alternate its sign depending on the position and filling of the deep impurity energy levels into the spacer. The results provide a basis for interpretation of recent experiments in iron/silicon multilayers.

  Info
Periodical
Solid State Phenomena (Volumes 152-153)
Edited by
N. Perov
Pages
567-570
DOI
10.4028/www.scientific.net/SSP.152-153.567
Citation
V.N. Men'shov, V.V. Tugushev, E.T. Kulatov, "Impurity Assisted Interlayer Exchange Coupling in Iron/Silicon Multilayers", Solid State Phenomena, Vols. 152-153, pp. 567-570, 2009
Online since
April 2009
Export
Price
$35.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: I.I. Parfenova, E.I. Yuryeva, Sergey A. Reshanov, V.P. Rastegaev, A.L. Ivanovskii
515
Authors: Jing Wen, Chun Ying Zuo, Cheng Zhong
Abstract:Motivated by the widely discussed Ag doped ZnO and the lack of follow-up reports about the realization of p-n junctions, we calculated the...
1097
Authors: V.I. Okulov, E.A. Pamyatnykh, Y.V. Zabaznov
Abstract:Based on a simple model, theoretical description of localized spins of hybridized electron states of donor impurities in the conduction band...
489
Authors: Faiz Salleh, Hiroya Ikeda
Abstract:We calculated the Seebeck coefficient of heavily-doped Si based on theoretical models of impurity-band formation, ionization-energy shift and...
197
Authors: Hai Dong Li, Jin Zhong Niu
Chapter 1: Materials Properties
Abstract:By the tight-binding method, we study the transport properties of right-angle L-shaped graphene nanoribbons. We found a universal conclusion...
1451