Paper Title:
Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application
  Abstract

We demonstrated a new fabrication method of Pt- and Ni-silicide nanodots with an areal density of the order of ~1011 cm-2 on SiO2 through the process steps of ultrathin metal film deposition on pre-grown Si-QDs and subsequent remote H2 plasma treatments at room temperature. Verification of electrical separation among silicide nanodots was made by measuring surface potential changes due to electron injection and extraction using an AFM/Kelvin probe technique. Photoemission measurements confirm a deeper potential well of silicide nanodots than Si-QDs and a resultant superior charge retention was also verified by surface potential measurements after charging to and discharging. Also, the advantage in many electron storage per silicide nanodot was demonstrated in C-V characteristics of MIS capacitors with silicide nanodots FGs.

  Info
Periodical
Solid State Phenomena (Volume 154)
Edited by
Marcin Leonowicz and Dariusz Oleszak
Pages
95-100
DOI
10.4028/www.scientific.net/SSP.154.95
Citation
S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe, R. Matsumoto, "Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application", Solid State Phenomena, Vol. 154, pp. 95-100, 2009
Online since
April 2009
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$32.00
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