Gettering and Defect Engineering in Semiconductor Technology XIII
Solid State Phenomena Volumes 156 - 158
doi:10.4028/www.scientific.net/SSP.156-158
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p-2
Preface
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14 K
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p-1
Committeess
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14 K
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p1
Influence of Defects on Solar Cell Characteristics
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405 K
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Authors: Otwin Breitenstein, Jan Bauer, Pietro P. Altermatt, Klaus Ramspeck
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p11
Dislocation Engineering in Multicrystalline Silicon
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3 M
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Authors: Mariana Bertoni, Clémence Colin, Tonio Buonassisi
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p19
Grain Boundaries in Multicrystalline Si
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2 M
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Authors: Jun Chen, Bin Chen, Woong Lee, Masayuki Fukuzawa, Masayoshi Yamada, Takashi Sekiguchi
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p27
Analysis of Heterogeneous Iron Precipitation in Multicrystalline Silicon
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176 K
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Authors: Antti Haarahiltunen, Ville Vähänissi, Marko Yli-Koski, H. Talvitie, Hele Savin
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p35
Growth of Silicon Carbide Filaments in Multicrystalline Silicon for Solar Cells
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1 M
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Authors: Hans Joachim Möller, Claudia Funke, Jan Bauer, S. Köstner, H. Straube, Otwin Breitenstein
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p41
Analysis of Silicon Carbide and Silicon Nitride Precipitates in Block Cast Multicrystalline Silicon
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461 K
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Authors: M. Holla, Tzanimir Arguirov, Winfried Seifert, Martin Kittler
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p49
Investigations on the Behaviour of Carbon during Inductive Melting of Multicrystalline Silicon
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782 K
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Authors: Lutz Raabe, Jan Ehrig, Sindy Würzner, Olf Pätzold, Michael Stelter, Hans Joachim Möller
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p55
An Investigation into Fracture of Multi-Crystalline Silicon
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891 K
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Authors: B.R. Mansfield, David E.J. Armstrong, Peter R. Wilshaw, John D. Murphy
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p61
Strained Silicon Devices
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363 K
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Authors: Manfred Reiche, O. Moutanabbir, Jan Hoentschel, U.M. Gösele, Stefan Flachowsky, Manfred Horstmann
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p69
Novel Trends in SOI Technology for CMOS Applications
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13 M
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Authors: Oleg Kononchuk, Didier Landru, Christelle Veytizou
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p77
Advanced Si-based Semiconductors for Energy and Photonic Applications
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1 M
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Authors: J. Kouvetakis, Jose Menendez, John Tolle
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p85
Si Wafer Bonding: Structural Features of the Interface
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1 M
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Authors: V.I. Vdovin, N.D. Zakharov, Eckhard Pippel, P. Werner, M.G. Milvidskii, M. Ries, M. Seacrist, Robert J. Falster
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p91
Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing
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2 M
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Authors: N.V. Frantskevich, A.V. Frantskevich, A.K. Fedotov, A.V. Mazanik