Paper Title:
Dislocation Engineering in Multicrystalline Silicon
  Abstract

Dislocations are known to be among the most deleterious performance-limiting defects in multicrystalline silicon (mc-Si) based solar cells. In this work, we propose a method to remove dislocations based on a high temperature treatment. Dislocation density reductions of >95% are achieved in commercial ribbon silicon with a double-sided silicon nitride coating via high temperature annealing under ambient conditions. The dislocation density reduction follows temperature-dependent and time-dependent models developed by Kuhlmann et al. for the annealing of dislocations in face-centered cubic metals. It is believed that higher annealing temperatures (>1170°C) allow dislocation movement unconstrained by crystallographic glide planes, leading to pairwise dislocation annihilation within minutes.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
11-18
DOI
10.4028/www.scientific.net/SSP.156-158.11
Citation
M. I. Bertoni, C. Colin, T. Buonassisi, "Dislocation Engineering in Multicrystalline Silicon", Solid State Phenomena, Vols. 156-158, pp. 11-18, 2010
Online since
October 2009
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Price
$32.00
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