Paper Title:
Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon Crystals
  Abstract

We confirm the following findings obtained in our previous experiment for the low-temperature elastic softening by the vacancies in boron-doped silicon crystals: (1) the steep softening that suddenly starts at 2-4 K in the cooling process, and (2) the complete disappearance of the softening by a weak magnetic field of 4 T applied along [111] direction. We further investigate in detail how the low-temperature softening at a fixed temperature responds to the applied magnetic field, to find the following characteristic anisotropy: The manner of disappearance of the softening strongly depends on the direction of the magnetic field. For the magnetic field imposed along [1-10] direction, nearly 60 % of the full softening still remains even at a strong magnetic field of 8 T, in contrast to the case of magnetic field applied along [111] direction.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
135-138
DOI
10.4028/www.scientific.net/SSP.156-158.135
Citation
H. Yamada-Kaneta, H. Watanabe, Y. Nagai, S. Baba, M. Akatsu, Y. Nemoto, T. Goto, "Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon Crystals", Solid State Phenomena, Vols. 156-158, pp. 135-138, 2010
Online since
October 2009
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