Paper Title:
Anomalous Out-Diffusion Profiles of Nitrogen in Silicon
  Abstract

Out-diffusion nitrogen profiles measured by SIMS after annealing at 850 and 800oC, have a peculiar minimum at a depth of about 5 m. The profiles are well reproduced by simulations assuming that there is a considerable fraction of nitrogen stored in substitutional clusters VN4. Upon annealing, these clusters lose nitrogen and convert into a stable high-temperature form VN1. This reaction involves a preliminary attachment of a fast-diffusing interstitial trimer, N3. Accordingly, the conversion occurs only in the bulk but not at the surface (due to out-diffusion loss of N3), and the substitutional component decreases from the surface towards the bulk. By fitting the profiles, the two basic parameters of the N2/N1 transport are deduced: P = D1K1/2 (a combination of the monomeric diffusivity D1 and the dissociation constant of dimers, K), and the dissociation time of dimers. With these data, D1(T) and K(T) are specified.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
149-154
DOI
10.4028/www.scientific.net/SSP.156-158.149
Citation
V. V. Voronkov, R. J. Falster, S. Senkader, "Anomalous Out-Diffusion Profiles of Nitrogen in Silicon", Solid State Phenomena, Vols. 156-158, pp. 149-154, 2010
Online since
October 2009
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Price
$32.00
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