Paper Title:
DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon
  Abstract

DLTS studies of transformation kinetics of different carbon–related complexes in electron irradiated n- and p-type silicon have been performed. It has been found that silicon self-interstitials have very low mobility even at room temperature in p-Si, but become extremely mobile under elec-tron injection. It is shown that upon annealing of interstitial carbon in p-Si a metastable state for interstitial carbon-interstitial oxygen complex is formed. This state has an energy level of about Еv+0.36 eV. The formation of the stable and metastable states takes place concurrently. The observed features of the carbon-related complexes formation are likely related to the existence of different crystallographic orientation of the equiprobable pathways through which the interstitial carbon and oxygen atoms can approach each other.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
155-160
DOI
10.4028/www.scientific.net/SSP.156-158.155
Citation
L.F. Makarenko, F.P. Korshunov, S. B. Lastovskii, L.I. Murin, M. Moll, "DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon ", Solid State Phenomena, Vols. 156-158, pp. 155-160, 2010
Online since
October 2009
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Authors: Vladimir P. Markevich, Anthony R. Peaker, Bruce Hamilton, Vasilii E. Gusakov, Stanislav B. Lastovskii, Leonid I. Murin, Naveengoud Ganagona, E.V. Monakhov, Bengt G. Svensson
Chapter 6: Radiation- and Impurity-Related Defect Studies in Silicon and Germanium
Abstract:It is argued in this work that a DLTS signal associated with hole emission from a radiation-induced defect with an energy level at...
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