Grain Boundaries in Multicrystalline Si |
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| Journal | Solid State Phenomena (Volumes 156 - 158) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XIII |
| Edited by | M. Kittler and H. Richter |
| Pages | 19-26 |
| DOI | 10.4028/www.scientific.net/SSP.156-158.19 |
| Citation | Jun Chen et al., 2009, Solid State Phenomena, 156-158, 19 |
| Online since | October, 2009 |
| Authors | Jun Chen, Bin Chen, Woong Lee, Masayuki Fukuzawa, Masayoshi Yamada, Takashi Sekiguchi |
| Keywords | EBIC, Grain Boundary, Multicrystalline Silicon |
| Abstract | We report the electrical, structural and mechanical properties of grain boundaries (GBs) in multicrystalline Si (mc-Si) based on electron-beam-induced current (EBIC), transmission electron microscope (TEM), and scanning infrared polariscope (SIRP) characterizations. The recombination activities of GBs are clearly classified with respect to GB character and Fe contamination level. The decoration of Fe impurity at boundary has been approved by annular dark field (ADF) imaging in TEM. Finally, the distribution of residual strain around GBs, and the correlations between strain and electrical properties are discussed. |
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