Paper Title:
Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects
  Abstract

In this paper a numerical model is investigated to predict and optimize the quality of Czochralski-grown silicon single crystals. The different mechanisms governing the formation, transport, recombination, nucleation and growth of point- and micro-defects in the crystal are put together with a view to getting a reliable picture of the entire set of physical effects governing the crystal quality. Numerical experiments are conducted to illustrate the model predictions.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
205-210
DOI
10.4028/www.scientific.net/SSP.156-158.205
Citation
F. Loix, F. Dupret, A. de Potter, R. Rolinsky, N. Van den Bogaert, V. Regnier, "Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects", Solid State Phenomena, Vols. 156-158, pp. 205-210, 2010
Online since
October 2009
Export
Price
$35.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Hiroshi Yamada-Kaneta, Terutaka Goto, Yuichi Nemoto, Koji Sato, Masatoshi Hikin, Yasuhiro Saito, Shintaro Nakamura
Abstract:The low-temperature ultrasonic experiments are performed to measure the distribution of vacancy concentration in the ingot of the...
455
Authors: Xin Huan Niu, Bai Mei Tan, Xiao Hong Zhao, Wei Lian Zhang
Abstract:Silicon-Germanium (SiGe) single crystal is a fully miscible solid solution with diamond-base, and has attracted keen interest as material for...
139
Authors: Hui Shen, Jia Yue Xu, An Hua Wu, Min Jin, Guo Jian Jiang
Abstract:YFeO3 single crystal, as a novel magneto-optical material, has attracted much attention due to its remarkable properties of primary...
580
Authors: Cai Hong Zhang, Lin Bi, Zi Zhou Gong
Chapter 1: Manufacturing Technology and Processing
Abstract:The numerical simulation research on temperature field of crystal and melt by using finite differential method during the growth of Nd:GGG...
58
Authors: Zhen Shi Hu, Zhi Wei Zhu, Rui Peng Yang, Lai Jun Wu, Hui Min Mao, Lin Ze Du, Rui Li
Chapter 3: E-Manufacturing, ERP, and Integrated Factory
Abstract:This paper puts forward a simulation program of crystal growth, using TSSG method which is based on the finite element simulation technology....
503