Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects |
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| Journal | Solid State Phenomena (Volumes 156 - 158) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XIII |
| Edited by | M. Kittler and H. Richter |
| Pages | 205-210 |
| DOI | 10.4028/www.scientific.net/SSP.156-158.205 |
| Citation | F. Loix et al., 2009, Solid State Phenomena, 156-158, 205 |
| Online since | October, 2009 |
| Authors | F. Loix, Francois Dupret, A. de Potter, R. Rolinsky, N. Van den Bogaert, V. Regnier |
| Keywords | Crystal Quality Optimization, Czochralski Silicon Growth, Microdefect, Numerical Modeling, Point Defect |
| Abstract | In this paper a numerical model is investigated to predict and optimize the quality of Czochralski-grown silicon single crystals. The different mechanisms governing the formation, transport, recombination, nucleation and growth of point- and micro-defects in the crystal are put together with a view to getting a reliable picture of the entire set of physical effects governing the crystal quality. Numerical experiments are conducted to illustrate the model predictions. |
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