Optimization of Silicon Ingot Quality
by the Numerical Prediction of Bulk Crystal Defects |
| Journal |
Solid State Phenomena (Volumes 156 - 158) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology XIII |
| Edited by |
M. Kittler and H. Richter |
| Pages |
205-210 |
| DOI |
10.4028/www.scientific.net/SSP.156-158.205 |
| Online since |
October, 2009 |
| Authors |
F. Loix, Francois Dupret, A. de Potter, R. Rolinsky, N. Van den Bogaert, V. Regnier |
| Keywords |
Crystal Quality Optimization, Czochralski Silicon Growth, Microdefect, Numerical Modelling, Point Defect |
| Abstract |
In this paper a numerical model is investigated to predict and optimize the quality of
Czochralski-grown silicon single crystals. The different mechanisms governing the formation,
transport, recombination, nucleation and growth of point- and micro-defects in the crystal are put
together with a view to getting a reliable picture of the entire set of physical effects governing the
crystal quality. Numerical experiments are conducted to illustrate the model predictions. |
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