Paper Title:
The Role of the Interstitial Oxygen in the Recovery and Evolution of the Boron Implantation Damage
  Abstract

The recovery of the boron implantation damage can be very difficult. Depending on the energy and the dose many dislocations are generated at the projected range of the boron implantation. The morphology of these dislocations depends on the silicon substrate. In this work we demonstrate that the interstitial oxygen concentration ([Oi]) is related with the dislocation dimension, density end morphology. Particularly long dislocation dipoles were generated by the boron implantation in substrate with interstitial oxygen, and their density is connected with the [Oi] concentration.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
269-274
DOI
10.4028/www.scientific.net/SSP.156-158.269
Citation
I. Mica, M. L. Polignano, F. Cazzaniga, L. Di Piazza, M. Mariani, E. Ricci, F. Sammiceli, S. Speranza, "The Role of the Interstitial Oxygen in the Recovery and Evolution of the Boron Implantation Damage", Solid State Phenomena, Vols. 156-158, pp. 269-274, 2010
Online since
October 2009
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