Paper Title:
Study of the Mechanisms of Oxygen Precipitation in RTA Annealed Cz-Si Wafers
  Abstract

In this paper, the influence of the rapid thermal annealing of single crystalline Cz-Si wafers on the evolution of the concentration of interstitial oxygen as well as oxygen in precipitated oxide phase was investigated by infrared spectroscopy. The wafers were preliminary furnace annealed to create the precipitate seeds. The concentration of interstitial oxygen was shows to decrease considerably as a result of annealing during up to 40 min together with the growth of the concentration of precipitated oxygen. This effect depended on the purity and defect structure of initial wafers. The kinetic model was developed to account for the observed effects based on the modification of the solubility level for interstitial oxygen induced by defects as well as its diffusivity. Obtained results of simulation agree well with the experimental data.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
279-282
DOI
10.4028/www.scientific.net/SSP.156-158.279
Citation
V.G. Litovchenko, I.P. Lisovskyy, M. Voitovych, A. V. Sarikov, S.O. Zlobin, V.P. Kladko, V. Machulin, "Study of the Mechanisms of Oxygen Precipitation in RTA Annealed Cz-Si Wafers", Solid State Phenomena, Vols. 156-158, pp. 279-282, 2010
Online since
October 2009
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Price
$32.00
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