Paper Title:
Electronic States of Oxygen-Free Dislocation Networks Produced by Direct Bonding of Silicon Wafers
  Abstract

The results of experimental investigations of the dislocation-related DLTS-peaks originated from the dislocation networks (DN) are presented. Samples with DNs were produced by direct bonding of p-type silicon wafers and no enhancement of oxygen concentration was detected near the DN plane. Origins of the DLTS peaks were proposed and a correlation with the dislocation-related photoluminescence data was established based on known dislocation structure of the samples. Two types of shallow DLTS peaks exhibited Pool-Frenkel effect, which could be linked to the dislocation deformation potential. One of the shallow DLTS peaks was related to straight parts of screw dislocations and another - to the intersections of the dislocations.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
283-288
DOI
10.4028/www.scientific.net/SSP.156-158.283
Citation
M. Trushin, O.F. Vyvenko, T. Mchedlidze, O. Kononchuk, M. Kittler, "Electronic States of Oxygen-Free Dislocation Networks Produced by Direct Bonding of Silicon Wafers", Solid State Phenomena, Vols. 156-158, pp. 283-288, 2010
Online since
October 2009
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Price
$32.00
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