Paper Title:
Defect Generation during Plastic Deformation of Si-Rich Cz-Grown SiGe Crystals
  Abstract

The IR absorption spectra and kinetics of the oxygen solid solution decay were studied in the Si1¡xGex crystals (0 · x · 0:055) plastically deformed at 680±C up to the 2{5% residual strain. It is found that the defects of non-dislocation nature, the dislocation trails, are formed during the plastic deformation of all studied SiGe crystals. The ¯ne structure of the IR absorption spectra around the 1000 cm¡1 wave number is found to be nearly identical in the pure Si (no Ge) samples and Si1¡xGex crystals with x · 0:02. At higher x the ¯ne structure was not detected due to the alloy-related broadening. In all studied crystals, the decay of the supersaturated oxygen solid solution at 650±C is determined by oxygen agglomeration at the dislocation trails as shown by the comparison with the samples annealed at 1150±C.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
295-298
DOI
10.4028/www.scientific.net/SSP.156-158.295
Citation
N. Yarykin, N. V. Abrosimov, "Defect Generation during Plastic Deformation of Si-Rich Cz-Grown SiGe Crystals", Solid State Phenomena, Vols. 156-158, pp. 295-298, 2010
Online since
October 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: S. Shevchenko, A.N. Tereshchenko
Abstract:Dislocation photoluminescence (DPL) is studied at 4.2K in plastically deformed germanium single crystals containing predominantly 60fl...
583
Authors: Katarzyna Racka, Emil Tymicki, Marcin Raczkiewicz, Krzysztof Grasza, Michal Kozubal, Elzbieta Jurkiewicz-Wegner, Rafał Jakieła, Andrzej Brzozowski, Mariusz Pawłowski, Miroslaw Piersa, J. Sadło, Jerzy Krupka
Abstract:n- and p-type 6H-SiC single crystals grown by PVT method using different charge materials – poly-SiC sinter or fresh SiC powder – have been...
19
Authors: Xin Huan Niu, Bai Mei Tan, Xiao Hong Zhao, Wei Lian Zhang
Abstract:Silicon-Germanium (SiGe) single crystal is a fully miscible solid solution with diamond-base, and has attracted keen interest as material for...
139
Authors: Guo Long Guo, Yan Wang, Xiao Long Yang, Jian Hua Huang
Abstract:PbWO4 crystals were synthesized by homogeneous precipitation in formamide (FA)/H2O solution, where the content of FA was found to play...
822
Authors: Xin Ming Cao, Wei Wei Guo, Xiao Wu Li
Abstract:The plastic deformation behavior of the and [014] Fe-35wt.%Cr alloy single crystals containing fine Cr-rich precipitates were investigated...
1960