Paper Title:
Role of Ion Irradiation Induced Lattice Defects on Nanoscale Capacitive Behavior of Graphene
  Abstract

Irradiation with high energy (500 keV) C+ ions at fluences from 11013 to 11014 cm-2 was used to introduce controlled amounts of defects in single layers of graphene deposited on a SiO2(100 nm)/n+Si substrate. Scanning Capacitance Spectroscopy (SCS) was used as non-destructive characterization technique to probe the effect of irradiation on the electrical properties of graphene. In particular, a comparative study between the local capacitance of pristine graphene and irradiated graphene is presented, showing that lateral variations in irradiated graphene are distinctly higher. The local quantum capacitance per unit area C’q of graphene was extracted from raw data. While a narrow distribution of C’q values was obtained in pristine graphene, two distinct distributions were obtained in irradiated monolayers, associated to locally damaged and not damaged regions, respectively.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
305-311
DOI
10.4028/www.scientific.net/SSP.156-158.305
Citation
S. Sonde, F. Giannazzo, V. Raineri, S. Di Franco, A. Marino, E. Rimini, "Role of Ion Irradiation Induced Lattice Defects on Nanoscale Capacitive Behavior of Graphene", Solid State Phenomena, Vols. 156-158, pp. 305-311, 2010
Online since
October 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jung Min Kim, Hyun Jung Her, Jeong Min Son, Y. Khang, Eun Hye Lee, Yong Sang Kim, Y.J. Choi, C.J. Kang
Abstract:Scanning probe microscope (SPM) with a conducting tip was used to electrically probe silicon nanocrystals (Si NCs) embedded in a SiO2 layer....
1094
Authors: Sima Dimitrijev, Ji Sheng Han, Jin Zou
Abstract:High-resolution transmission electron microscopy (HR TEM) reveals an atomically flat SiC surface after oxidation in either NO or dry O2...
975
Authors: Pawel A. Sobas, Ulrike Grossner, Bengt G. Svensson
Abstract:Using impedance spectroscopy (IS) for the characterization of SiO2/4H-SiC (MOS) structures, insight on the capacitive and resistive...
501
Authors: Svetlana Beljakowa, Sergey A. Reshanov, Bernd Zippelius, Michael Krieger, Gerhard Pensl, Katsunori Danno, Tsunenobu Kimoto, Shinobu Onoda, Takeshi Ohshima, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke
Abstract:Aluminum-doped 4H-SiC samples were either irradiated with high-energy electrons (170 keV or 1 MeV) or implanted with a box-shaped...
427
Authors: Sandeepan DasGupta, Andrew Armstrong, Robert Kaplar, Matthew Marinella, Reinhard Brock, Mark Smith, Stanley Atcitty
Chapter 3: Physical Properties and Characterization of SiC
Abstract:Carrier generation characteristics in n-type substrate SiC MOS capacitors induced by sub-bandgap energy light are reported. The generation...
441