Paper Title:
Boron and Phosphorus Implantation Induced Electrically Active Defects in p-Type Silicon
  Abstract

Electrically active defects induced by ion implantation of boron and phosphorus into silicon and their recovery under isothermal annealing at 450 °C were investigated using Deep Level Transient Spectroscopy (DLTS) and Energy Resolved Tunneling Photoconductivity (ERTP) spectroscopy at cryogenic temperatures. DLTS results show electrically active deep traps located at Ev+0.35 eV and Ev+0.53 eV in boron implanted Si and at Ev+0.34 eV, Ev+0.43 eV, and Ev+0.38 eV in phosphorus implanted Si. These meta-stable defect sites were found to be either eliminated or significantly reduced in thermally annealed samples. We assigned these defect sites to hydrogen and carbon incorporated complexes formed during ion implantation. Corroborating the DLTS results, the photocurrent measurement also revealed a strong reduction of electrically active defects states, extended from EC – 0.3 eV up to the conduction band edge of Si, upon isothermal annealing.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
313-317
DOI
10.4028/www.scientific.net/SSP.156-158.313
Citation
J. Senawiratne, J. S. Cites, J. G. Couillard, J. Moll, C. A. Kosik Williams, P. G. Whiting, "Boron and Phosphorus Implantation Induced Electrically Active Defects in p-Type Silicon", Solid State Phenomena, Vols. 156-158, pp. 313-317, 2010
Online since
October 2009
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$32.00
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