Paper Title:
Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes
  Abstract

The electrical current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/3C-SiC Schottky diodes were studied as a function of contact area. The results were correlated to defects in the 3C-SiC, which were studied and quantified by conductive atomic force microscopy (C-AFM). A method based on C-AFM was introduced that enables current-voltage characterization of diodes of contact radius down to 5 µm, which consequently allows the extraction of diode parameters for Schottky diodes of very small contact area.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
331-336
DOI
10.4028/www.scientific.net/SSP.156-158.331
Citation
J. Eriksson, M. H. Weng, F. Roccaforte, F. Giannazzo, S. Leone, V. Raineri, "Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes", Solid State Phenomena, Vols. 156-158, pp. 331-336, 2010
Online since
October 2009
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Price
$32.00
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