Paper Title:
Suppression of Pores Formation on a Surface of p-Si by Laser Radiation
  Abstract

The influence of strongly absorbing N¬2 laser radiation on pores formation on a surface of Si single crystal has been investigated using optical microscope, atomic force microscope and photoluminescence. After irradiation by the laser and subsequent electrochemical etching in HF acid solution morphological changes of the irradiated parts of a surface of Si were not observed. At the same time, pores formation on the non-irradiated parts of Si surface took place. The porous part of the Si surface is characterized by strong photoluminescence in red part of spectra with maximum at 1.88 eV and intensity of photoluminescence increases with current density. Suppression of the pores formation by the laser radiation is explained with inversion of Si type conductivity from p-type to n-type. This fact is explained by Thermogradient effect – generation and redistribution of the intrinsic defects in gradient of temperature. It was shown that the depth of n-Si layer on p-Si substrate depends on intensity of laser radiation and it increases with intensity of laser radiation. The results of the investigation can be used for optical recording and storage of information on surface of semiconductors.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
337-341
DOI
10.4028/www.scientific.net/SSP.156-158.337
Citation
A. Medvid, P. Onufrijevs, L. Fedorenko, N. Yusupov , E. Dauksta, "Suppression of Pores Formation on a Surface of p-Si by Laser Radiation", Solid State Phenomena, Vols. 156-158, pp. 337-341, 2010
Online since
October 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Valeri V. Afanas'ev, Florin Ciobanu, Sima Dimitrijev, Gerhard Pensl, Andre Stesmans
Abstract:Properties of defects encountered at the oxidized surfaces of silicon carbide (SiC) suggest their origin to be different from the...
563
Authors: Surina Othman, F.K. Yam, Abu Hassan Haslan, Hassan Zainuriah
Abstract:In this study, we investigated the contact characteristics of bi-layer thin films, Ag (200nm)/Ti (100nm) on Si-doped n-type Al0.27Ga0.73N...
281
Authors: Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Salvatore Di Franco, Valeria Puglisi, Vito Raineri
Abstract:In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and...
1341
Authors: A.V. Frantskevich, A.K. Fedotov, A.V. Mazanik, N.V. Frantskevich
Abstract:In this work we have studied the in-depth distribution of copper deposited on the surface of the hydrogen pre-implanted Cz Si wafers...
161