Paper Title:
Bulk Passivation of Defects in Multi-Crystalline Silicon Solar Cells by a-SiNx:H Layers
  Abstract

In this work the impact of hydrogenation from hydrogen-rich amorphous silicon nitride (a-SiNx:H) on dislocations and grain boundaries in multi-crystalline silicon (mc-Si) solar cells is presented. Layers are deposited by means of plasma enhanced chemical vapor deposition (PECVD). Electrical bulk passivation is provided during thermal annealing, in which hydrogen diffuses from a-SiNx:H. The passivation effect is discussed in terms of recombination centers and non-recombinative charge traps reduction as well as in terms of local short circuit current improvement in specially manufactured solar cells.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
357-362
DOI
10.4028/www.scientific.net/SSP.156-158.357
Citation
E. Cornagliotti, H. F.W. Dekkers, C. Prastani, J. John, E. Van Kerschaver, J. Poortmans, R. P. Mertens, "Bulk Passivation of Defects in Multi-Crystalline Silicon Solar Cells by a-SiNx:H Layers", Solid State Phenomena, Vols. 156-158, pp. 357-362, 2010
Online since
October 2009
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$32.00
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