Paper Title:
Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates
  Abstract

We have investigated the gettering efficiency at the interface of Si (110) and Si (100) directly bonded (DSB) substrates. DSB substrates were prepared by conventional bonding and grinding back methods. DSB substrates were intentionally contaminated with 3d transition metals (Fe, Ni, Cu) and then annealed at 1000 oC. The dependence of metal concentrations on the depth was evaluated by a secondary ionization mass spectrometer (SIMS). Furthermore, we observed the interface of DSB by transmission electron microscope (TEM), and characterized the form of the gettered metals.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
369-373
DOI
10.4028/www.scientific.net/SSP.156-158.369
Citation
T. Aoki, H. Kariyazaki, K. Sueoka, K. Izunome, "Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates", Solid State Phenomena, Vols. 156-158, pp. 369-373, 2010
Online since
October 2009
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$32.00
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