Paper Title:
Trans-RP Gettering and Out-Diffusion of Oxygen Implanted into Highly B-Doped Silicon
  Abstract

Implantation of 18O into highly B-doped and undoped silicon provides the possibility to investigate the effect of B-doping and to distinguish the processes of in-diffusion and out-diffusion of oxygen by profiling of 16O and 18O, respectively. The simultaneous in- and outdiffusion of oxygen was observed at 1000°C under oxidizing conditions. For silicon, heavily Bdoped to concentrations of 􀀀 1019 B cm-3, oxygen tends to diffuse out toward the surface. Moreover, a fraction of the oxygen from both sources, implanted 18O and in-diffused 16O, also migrates deep into the substrate and is trapped far beyond the mean ion range RP in the depth of x  3RP at the so-called trans-RP gettering peak. In undoped silicon oxygen accumulation only takes place at vacancy-type defects introduced by ion implantation at a position shallower than RP. The mobility of oxygen implanted into B-doped Si is higher than for implantation into undoped Si. Highly mobile defects are suggested to be formed in B-doped silicon beside the common mobile interstitial oxygen, Oi, and the immobile SiOX precipitates. These I OXBY defects may involve selfinterstitials, I, and O and B atoms. The trans-RP peak appears due to the decay of these defects and the segregation of their constituents.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
375-380
DOI
10.4028/www.scientific.net/SSP.156-158.375
Citation
R. Kögler, C. Dubois, J. W. Gerlach, H. Hutter, A. Mücklich, W. Skorupa, "Trans-RP Gettering and Out-Diffusion of Oxygen Implanted into Highly B-Doped Silicon", Solid State Phenomena, Vols. 156-158, pp. 375-380, 2010
Online since
October 2009
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