Paper Title:
Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi
  Abstract

Defects distribution in 6H-SiC implanted with Bi ions was investigated with the local cathodoluminescence. There are two typical areas with radiation defects found in implanted samples. Implanted layer was about 27 micrometers depth. Far-action area with radiation defects was observed for the first time. Thickness of this area varies from few tens up to hundreds micrometers. This effect depended on concentration of defects i.e. irradiation fluence. Radiation defects at this area disappeared after annealing the sample if fluence is not to high.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
401-405
DOI
10.4028/www.scientific.net/SSP.156-158.401
Citation
D.B. Shustov, E.V. Kolesnikova, E. V. Kalinina, V.A. Skuratov, M.V. Zamoryanskaya, "Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi", Solid State Phenomena, Vols. 156-158, pp. 401-405, 2010
Online since
October 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Vitalii V. Kozlovski, Elena V. Bogdanova, Valentin V. Emtsev, Konstantin V. Emtsev, Alexander A. Lebedev, V.N. Lomasov
Abstract:A comparison study of radiation damage in n-type silicon grown by the floating zone technique and n-type silicon carbide grown by the...
385
Authors: Marie France Barthe, L. Henry, S. Arpiainen, G. Blondiaux
Abstract:This paper presents positron lifetime results which give information on the nature of vacancy defects induced by electron irradiation in...
473
Authors: M.V. Zamoryanskaya, V.I. Sokolov
Abstract:The local cathodoluminescence is used to study the point defects and their depth distribution in silicon oxide and silicon. The defects...
629
Authors: N. Chuchvaga, E. Bogdanova, A. Strelchuk, Evgenia V. Kalinina, D.B. Shustov, M. Zamoryanskaya, V. Shkuratov
Chapter 7: Electrical and Structural Characterization
Abstract:A comparative research of the cathodoluminescence and electrical characteristics of the samples 4H-SiC irradiated with high energy Xe ions...
625
Authors: Pavel Hazdra, Stanislav Popelka, Vít Zahlava
Chapter IV: SiC Devices and Circuits
Abstract:Commercial 1200V and 1700V MPS diodes and 1700V vertical JFETs produced on 4H-SiC n-type epilayers were neutron irradiated with fluences up...
785