Paper Title:
Characterization of Thin Film Photovoltaic Material Using Photoluminescence and Raman Spectroscopy
  Abstract

Electrical and structural properties of thin-film photovoltaic (PV) material fabricated using Crystal Silicon on Glass (CSG) technology was investigated applying photoluminescence (PL) and Raman spectroscopy (RS). The obtained results and their correlation with the PV properties of the cells prepared from the same material showed that PL is applicable for in-line characterization of the material before the electrical contact fabrication processes. The results obtained using RS gave useful information on crystallization grade of the material during the fabrication process.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
419-424
DOI
10.4028/www.scientific.net/SSP.156-158.419
Citation
T. Mchedlidze, T. Arguirov, S. Kouteva-Arguirova, M. Kittler, "Characterization of Thin Film Photovoltaic Material Using Photoluminescence and Raman Spectroscopy", Solid State Phenomena, Vols. 156-158, pp. 419-424, 2010
Online since
October 2009
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