Paper Title:
Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs
  Abstract

We report a dynamic and microscopic investigation of electrical stress induced defects in metal-oxide-semiconductor (MOS) devices with high-k gate dielectric by using electron-beam induced current (EBIC) technique. The correlation between time-dependent dielectric breakdown (TDDB) characteristics and EBIC imaging of breakdown sites are found. A systematic study was performed on pre-existing and electrical stress induced defects. Stress-induced defects are related to the formation of electron trapping defects. The origin of pre-existing defects is also discussed in terms of oxygen vacancy model with comparing different gate electrodes.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
461-466
DOI
10.4028/www.scientific.net/SSP.156-158.461
Citation
J. Chen, T. Sekiguchi, M. Takase, N. Fukata, R. Hasunuma, K. Yamabe, M. Sato, K. Yamada, T. Chikyo, "Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs", Solid State Phenomena, Vols. 156-158, pp. 461-466, 2010
Online since
October 2009
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Price
$35.00
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