Paper Title:
SEM Characterization of Silicon Layers Grown on Carbon Foil
  Abstract

Characterization of defect structure in silicon ribbon grown on carbon foil has been carried out. The structure of grown Si layers and a dislocation density in these layers have been studied using selective chemical etching and the Electron Backscattering Diffraction. It is observed that the layers consist of rather large grains, the majority of which is elongated along the growth direction with a similar surface orientation and with a misorientation angle between neighboring grains of 60º. This means that such grains are separated by the (111) twin boundaries. The dislocation density in different grains is found to vary from 102 to 107cm-2. The energy dispersive X-Ray microanalysis has shown that some twin boundaries are enriched with carbon.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
473-476
DOI
10.4028/www.scientific.net/SSP.156-158.473
Citation
S. K. Brantov, A.V. Eltzov, O. V. Feklisova, E. B. Yakimov, "SEM Characterization of Silicon Layers Grown on Carbon Foil", Solid State Phenomena, Vols. 156-158, pp. 473-476, 2010
Online since
October 2009
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