Paper Title:
Theoretical Study of Ionized Impurities in Silicon Nanowire MOS Transistors
  Abstract

This study presents ionized impurity impacts on silicon nanowire MOS transistors. We calculate the current characteristics with a self-consistent three-dimensional (3D) Green’s function approach and show the effects of both acceptor and donor impurities on the physical electron properties. In particular, we emphasize that the presence of a donor induces different transport phenomena according to the applied gate bias. Our results show that the influence of a single impurity strongly depends on its position and induces high transistor performance variability with current modifications from 50% to two orders of magnitude.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
511-516
DOI
10.4028/www.scientific.net/SSP.156-158.511
Citation
M. Bescond, M. Lannoo, L. Raymond, F. Michelini, "Theoretical Study of Ionized Impurities in Silicon Nanowire MOS Transistors", Solid State Phenomena, Vols. 156-158, pp. 511-516, 2010
Online since
October 2009
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Price
$32.00
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