Paper Title:
Anisotropic Strain – Anisotropic Heating Engineering for Silicon Nanocrystals in SiO2
  Abstract

In the present paper we discuss effects due to high-energy ion bombardment of SiO2 layers with embedded Si nanocrystals (NCs), such as the formation of new Si NCs in such layers, amorphization of previously existing NCs, modification of NC size distribution, and modification of optical and electrical properties of NCs. These effects are identified as resulting from anisotropic strain - anisotropic heating in NCs-SiO2 layers under ion irradiation.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
523-528
DOI
10.4028/www.scientific.net/SSP.156-158.523
Citation
I.V. Antonova, D.V. Marin, V. A. Volodin, V.A. Skuratov, J. Jedrzejewski, I. Balberg, "Anisotropic Strain – Anisotropic Heating Engineering for Silicon Nanocrystals in SiO2", Solid State Phenomena, Vols. 156-158, pp. 523-528, 2010
Online since
October 2009
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