Paper Title:
D-Line Emission from Small Angle Grain Boundaries in Multicrystalline Si
  Abstract

We have characterized optical property of small-angle (SA) grain-boundaries (GBs) in high-pure multicrystalline Si by using cathodoluminescence (CL). Prior to CL measurement, the electrical activity of GBs were evaluated by using electron-beam-induced current (EBIC). The SA-GBs are categorized into two groups with room temperature (RT-) EBIC contrast. The SA-GBs with misorientation angle about 1º give weak RT-EBIC contrast and yield D3 and D4. The SA-GBs with 2.5º show strong EBIC contrast and yield D1 and D2. These correspondences reflect the dislocation density at the SA-GBs. We also found the curious distribution of D1 emission in some special GBs, which is now difficult to explain. It is noticed that large-angle GBs do not show any D-line emissions at all.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
561-565
DOI
10.4028/www.scientific.net/SSP.156-158.561
Citation
T. Sekiguchi, W. Lee, J. Chen, B. Chen, "D-Line Emission from Small Angle Grain Boundaries in Multicrystalline Si", Solid State Phenomena, Vols. 156-158, pp. 561-565, 2010
Online since
October 2009
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Price
$32.00
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