We have characterized optical property of small-angle (SA) grain-boundaries (GBs) in high-pure multicrystalline Si by using cathodoluminescence (CL). Prior to CL measurement, the electrical activity of GBs were evaluated by using electron-beam-induced current (EBIC). The SA-GBs are categorized into two groups with room temperature (RT-) EBIC contrast. The SA-GBs with misorientation angle about 1º give weak RT-EBIC contrast and yield D3 and D4. The SA-GBs with 2.5º show strong EBIC contrast and yield D1 and D2. These correspondences reflect the dislocation density at the SA-GBs. We also found the curious distribution of D1 emission in some special GBs, which is now difficult to explain. It is noticed that large-angle GBs do not show any D-line emissions at all.