Paper Title:
Structural and Luminescent Properties of Implanted Silicon Layers with Dislocation-Related Luminescence
  Abstract

Structural and luminescence properties have been studied in silicon layers with dislocation-related luminescence. Multiple room temperature implantation of oxygen ions with doses low than the amorphization threshold was carried out. Silicon ions with a dose exceeding the amorphization threshold by two orders of magnitude were implanted at a higher temperature (≥ 80°C). Both the implantations were not followed by the amorphization of the implanted layers. Annealing in a chlorine-containing atmosphere resulted in formation of extended structural defects and luminescence centers. Some regularities and peculiarities in the properties of the extended defects and dislocation-related luminescence lines were revealed in dependence on the implantation and annealing conditions.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
573-578
DOI
10.4028/www.scientific.net/SSP.156-158.573
Citation
N.A. Sobolev, Kalyadin, R.N. Kyutt, E. I. Shek, V.I. Vdovin, "Structural and Luminescent Properties of Implanted Silicon Layers with Dislocation-Related Luminescence", Solid State Phenomena, Vols. 156-158, pp. 573-578, 2010
Online since
October 2009
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$32.00
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