Paper Title:
Optimization of the Luminescence Properties of Silicon Diodes Produced by Implantation and Annealing
  Abstract

Incorporation of optical components into microelectronic devices will significantly improve their performance. Absence of effective Si-based light emitter hampers such integration. In the present work light emitting Si diodes, fabricated by dopant (boron or phosphorous) implantation and annealing are investigated. Different implantation doses and annealing temperatures were employed. The efficiency of the electroluminescence (EL), obtained from such structures was measured and correlated with the fabrication process parameters. As previously reported, the EL of band-to-band radiative transition in Si is strongly influenced, by the dopant implantation dose, i.e. higher doses usually enhance EL. Our results suggest that the effect is mainly related to the increase of minority carrier lifetime in the substrate. Distinct measurements showed that the higher implantation doses lead longer carrier lifetimes in the samples. The correlation between lifetime and the EL efficiency could be satisfactory explained in the frame of a classical model, considering the carrier-injection dependence of the rates of the three main recombination mechanisms in silicon, i.e. multi-phonon, radiative and Auger recombination. We suppose that the increase in the implantation dose improves minority carrier lifetime due to the gettering of impurity atoms from the substrate material to the highly doped emitter region.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
579-584
DOI
10.4028/www.scientific.net/SSP.156-158.579
Citation
T. Arguirov, T. Mchedlidze, M. Reiche, M. Kittler, "Optimization of the Luminescence Properties of Silicon Diodes Produced by Implantation and Annealing", Solid State Phenomena, Vols. 156-158, pp. 579-584, 2010
Online since
October 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Isabella Mica, Maria Luisa Polignano, F. Cazzaniga, L. Di Piazza, M. Mariani, E. Ricci, F. Sammiceli, S. Speranza
Abstract:The recovery of the boron implantation damage can be very difficult. Depending on the energy and the dose many dislocations are generated at...
269
Authors: Jayantha Senawiratne, Jeffery S. Cites, James G. Couillard, Johannes Moll, Carlo A. Kosik Williams, Patrick G. Whiting
Abstract:Electrically active defects induced by ion implantation of boron and phosphorus into silicon and their recovery under isothermal annealing...
313
Authors: Xi Song, Anne Elisabeth Bazin, Jean François Michaud, Frédéric Cayrel, Marcin Zielinski, Marc Portail, Thierry Chassagne, Emmanuel Collard, Daniel Alquier
Abstract:Two electrical characterization methods were used to study 3C-SiC epilayers doped by nitrogen implantation: circular Transfer Length Method...
193
Authors: Xi Song, Jérôme Biscarrat, Anne Elisabeth Bazin, Jean François Michaud, Frédéric Cayrel, Marcin Zielinski, Thierry Chassagne, Marc Portail, Emmanuel Collard, Daniel Alquier
Chapter 4: Characterization: Devices and Material
Abstract:In this paper, we studied the influence of nitrogen implantation dose on both physical and electrical properties in 3C-SiC grown on Si (100)...
154