Strained Silicon Devices |
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| Journal | Solid State Phenomena (Volumes 156 - 158) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XIII |
| Edited by | M. Kittler and H. Richter |
| Pages | 61-68 |
| DOI | 10.4028/www.scientific.net/SSP.156-158.61 |
| Citation | Manfred Reiche et al., 2009, Solid State Phenomena, 156-158, 61 |
| Online since | October, 2009 |
| Authors | Manfred Reiche, O. Moutanabbir, Jan Hoentschel, U.M. Gösele, Stefan Flachowsky, Manfred Horstmann |
| Keywords | Global Strain, Mobility Enhancement, Process-Induced Strain, SSOI, Strained Silicon |
| Abstract | Strained silicon channels are one of the most important Technology Boosters for further Si CMOS developments. The mobility enhancement obtained by applying appropriate strain provides higher carrier velocity in MOS channels, resulting in higher current drive under a fixed supply voltage and gate oxide thickness. The physical mechanism of mobility enhancement, methods of strain generation and their application for advanced VLSI devices is reviewed. |
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