Paper Title:
Novel Trends in SOI Technology for CMOS Applications
  Abstract

High temperature annealing of SOI wafers in non-oxidized ambient leads to internal Buried Oxide (BOX) dissolution. The underlying mechanisms and kinetics of this effect are discussed. High quality SOI wafers with very thin BOX down to 2nm are demonstrated utilizing optimized annealing conditions. Hybrid SOI/bulk wafers are obtained by the new process applying silicon nitride mask on the wafer surface. Stability of SOI and Si3N4/SOI systems at high temperatures is discussed and optimized process window is determined.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
69-76
DOI
10.4028/www.scientific.net/SSP.156-158.69
Citation
O. Kononchuk, D. Landru, C. Veytizou, "Novel Trends in SOI Technology for CMOS Applications", Solid State Phenomena, Vols. 156-158, pp. 69-76, 2010
Online since
October 2009
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Price
$32.00
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